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Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Tampo, Motonobu*; Takeshita, Soshi*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1566 - 1572, 2020/07
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Muon-induced single event upset (SEU) is predicted to increase with technology scaling. The angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk SRAM and FDSOI SRAM at two angles of incidence: 0 degree (vertical) and 45 degree (tilted). The tilted incidence drifts the muon energy peak to a higher energy. Moreover, the SEU characteristics (i.e., such as the voltage dependences of the SEU cross sections and multiple cells upset patterns) between the vertical and tilted incidences are similar.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Abe, Shinichiro; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 66(7), p.1390 - 1397, 2019/07
Times Cited Count：13 Percentile：81.94(Engineering, Electrical & Electronic)Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern in radiation effects on microelectronic devices since it can spoil error correcting codes. Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs were recently reported. Neutron- and negative muon-induced MCUs are both caused by secondary ions, and hence, they are expected to have some similarity. In this paper, we compare negative muon- and neutron-induced MCUs in 65-nm bulk SRAMs at the irradiation experiments using spallation and quasi-monoenergetic neutrons and monoenergetic negative muons. The measurement results show that the dependencies of MCU event cross section on operating voltage are almost identical. The Monte Carlo simulation is conducted to investigate the deposited charge. The distributions of deposited charge obtained by the simulation are consistent with the above-mentioned experimental observations.
Abe, Shinichiro; Sato, Tatsuhiko
EPJ Web of Conferences, 122, p.04002_1 - 04002_6, 2016/06
Times Cited Count：0 Percentile：0.06(Physics, Nuclear)Nuclear transmutation has been investigated to reduce long-lived fission products (LLFPs) in high level radioactive wastes. However, the nuclear transmutation is difficult for some LLFPs (e.g., 
Sr, 
Sn and 
Cs) having small cross-sections of fission and neutron capture. Negative muon is examined to be applied for the nuclear transmutation. Low energy negative muon is captured on an atom, and then it can decay or be further captured on its nucleus. When negative muon is captured on nucleus, some light particles and residual nucleus are produced. Negative muon capture process has been implemented into latest version of PHITS. In this study, we studied the feasibility of nuclear transmutation by negative muon capture reaction for LLFPs using PHITS. Negative muon capture reaction on 90Sr is simulated. It is found that 94% of negative muons are captured on nucleus, and 66% of Sr become stable nuclides or radioactive nuclides having less than 20 days. It is also found that 15% of Sr become 
Rb having longer half-life than that of Sr.
